Tunneling measurements have been obtained using a point contact method on single crystals of overdoped BSCCO 2212 with Tc values near 62 K. The dynamic conductances of the SIN junctions (Au tip) are qualitatively similar to those found on optimally doped BSCCO 2212 but with reduced gap values. Typically, Δ= 15 meV to 20 meV, with the former value consistent with that found in Raman scattering on similar crystals. Reproducible SIS junctions are obtained between two pieces of the BSCCO crystal which display well-resolved quasiparticle and Josephson currents. The high bias conductance data display the asymmetric dip feature as is found in optimal-doped BSCCO but we have found that dip is just part of a larger spectral feature that extends out to 400 mV. The conductance spectra are remarkably similar to those found in angle resolved photoemission experiments.

Tunneling Study of Overdoped BSCCO 2212

Romano P;
1997

Abstract

Tunneling measurements have been obtained using a point contact method on single crystals of overdoped BSCCO 2212 with Tc values near 62 K. The dynamic conductances of the SIN junctions (Au tip) are qualitatively similar to those found on optimally doped BSCCO 2212 but with reduced gap values. Typically, Δ= 15 meV to 20 meV, with the former value consistent with that found in Raman scattering on similar crystals. Reproducible SIS junctions are obtained between two pieces of the BSCCO crystal which display well-resolved quasiparticle and Josephson currents. The high bias conductance data display the asymmetric dip feature as is found in optimal-doped BSCCO but we have found that dip is just part of a larger spectral feature that extends out to 400 mV. The conductance spectra are remarkably similar to those found in angle resolved photoemission experiments.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.12070/13919
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