Films of BizSr2CaCuZOg I x have been grown from KCl solution. Gadolinium gallium garnet substrates (1 1 1) oriented have been used. The fUms resulted highly textured with the c axis perpendicular to the substrate surface. The onset of the resistive transition was 85 K, while zero resistance was obtained at 50 K. This technique is particularly promising in view of the possibility to grow large epitaxial films of both the Bi2Sr2CaCu20 S ~ x and the nizSr 2Ca2Cu3010 -f x phases.

GROWTH OF TEXTURED FILMS OF BI2SR2CACU2O8+X FROM KCL SOLUTION

ROMANO P.
1989

Abstract

Films of BizSr2CaCuZOg I x have been grown from KCl solution. Gadolinium gallium garnet substrates (1 1 1) oriented have been used. The fUms resulted highly textured with the c axis perpendicular to the substrate surface. The onset of the resistive transition was 85 K, while zero resistance was obtained at 50 K. This technique is particularly promising in view of the possibility to grow large epitaxial films of both the Bi2Sr2CaCu20 S ~ x and the nizSr 2Ca2Cu3010 -f x phases.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/20.500.12070/920
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