Ultrathin films of the electron-doped compound Nd2-xCexCuO4±δ(NCCO) were realized by dc sputtering technique. The films were grown both on (001)-oriented SrTiO3and nonstoichiometric SrTiO3with Ti-rich defects. Also, the NCO parent compound, namely Nd2CuO4, was used as buffer layer to improve the crystalline properties because of the very small lattice parameter mismatch, as well as compatible depositions conditions, compared to NCCO. The morphological and structural characterization were carried out on several samples, by means of surface analysis techniques and X-ray diffraction, in order to optimize the growth procedure.

Nd2-xCexCuO4±δUltrathin Films Crystalline Properties

Romano, Paola;Leo, Antonio;Avitabile, Francesco;Grimaldi, Gaia;
2018

Abstract

Ultrathin films of the electron-doped compound Nd2-xCexCuO4±δ(NCCO) were realized by dc sputtering technique. The films were grown both on (001)-oriented SrTiO3and nonstoichiometric SrTiO3with Ti-rich defects. Also, the NCO parent compound, namely Nd2CuO4, was used as buffer layer to improve the crystalline properties because of the very small lattice parameter mismatch, as well as compatible depositions conditions, compared to NCCO. The morphological and structural characterization were carried out on several samples, by means of surface analysis techniques and X-ray diffraction, in order to optimize the growth procedure.
Electron-doped (e-doped) compounds; sputtering; superconductivity; thin films; X-ray diffraction; Electronic, Optical and Magnetic Materials; Condensed Matter Physics; Electrical and Electronic Engineering
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/20.500.12070/38009
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