We have measured SIS quasiparticle tunneling in YBaCuO/PrBaCuO/YBaCuO trilayers. The heterostructures were realized on SrTiO3 substrates, by sequential deposition of high quality (001) oriented epitaxial films, using a high pressure dc sputtering in pure oxygen plasma. The YBaCuO films show a zero resistance and a diamagnetic transition temperature at 91 K, while the PrBaCuO barrier exhibits a semiconducting behavior. Conductance characteristics vs. voltage, at low biases, show well developed peaks indicative of gap structures at ±45 mV, a flat background conductance for voltage greater than 50 mV and a ratio smaller than 0.1 between zero bias and normal state conductance.
Growth and tunneling spectroscopy of YBaCuO/PrBaCuO/HoBaCuO trilayers
Romano P;
1996-01-01
Abstract
We have measured SIS quasiparticle tunneling in YBaCuO/PrBaCuO/YBaCuO trilayers. The heterostructures were realized on SrTiO3 substrates, by sequential deposition of high quality (001) oriented epitaxial films, using a high pressure dc sputtering in pure oxygen plasma. The YBaCuO films show a zero resistance and a diamagnetic transition temperature at 91 K, while the PrBaCuO barrier exhibits a semiconducting behavior. Conductance characteristics vs. voltage, at low biases, show well developed peaks indicative of gap structures at ±45 mV, a flat background conductance for voltage greater than 50 mV and a ratio smaller than 0.1 between zero bias and normal state conductance.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
