We have measured SIS quasiparticle tunneling in YBaCuO/PrBaCuO/YBaCuO trilayers. The heterostructures were realized on SrTiO3 substrates, by sequential deposition of high quality (001) oriented epitaxial films, using a high pressure dc sputtering in pure oxygen plasma. The YBaCuO films show a zero resistance and a diamagnetic transition temperature at 91 K, while the PrBaCuO barrier exhibits a semiconducting behavior. Conductance characteristics vs. voltage, at low biases, show well developed peaks indicative of gap structures at ±45 mV, a flat background conductance for voltage greater than 50 mV and a ratio smaller than 0.1 between zero bias and normal state conductance.

Growth and tunneling spectroscopy of YBaCuO/PrBaCuO/HoBaCuO trilayers

Romano P;
1996

Abstract

We have measured SIS quasiparticle tunneling in YBaCuO/PrBaCuO/YBaCuO trilayers. The heterostructures were realized on SrTiO3 substrates, by sequential deposition of high quality (001) oriented epitaxial films, using a high pressure dc sputtering in pure oxygen plasma. The YBaCuO films show a zero resistance and a diamagnetic transition temperature at 91 K, while the PrBaCuO barrier exhibits a semiconducting behavior. Conductance characteristics vs. voltage, at low biases, show well developed peaks indicative of gap structures at ±45 mV, a flat background conductance for voltage greater than 50 mV and a ratio smaller than 0.1 between zero bias and normal state conductance.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/20.500.12070/3113
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