A new class of silicon electro-optical modulators for lambda = 1.3 and 1.55-mu-m is proposed and analyzed. The devices, based on single- and multi-pass Fabry-Perot interferometry, can be built by standard microelectronic techniques.

NEW POSSIBILITIES FOR EFFICIENT SILICON INTEGRATED ELECTROOPTICAL MODULATORS

CUTOLO A.
1991

Abstract

A new class of silicon electro-optical modulators for lambda = 1.3 and 1.55-mu-m is proposed and analyzed. The devices, based on single- and multi-pass Fabry-Perot interferometry, can be built by standard microelectronic techniques.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.12070/1722
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