A new class of silicon electro-optical modulators for lambda = 1.3 and 1.55-mu-m is proposed and analyzed. The devices, based on single- and multi-pass Fabry-Perot interferometry, can be built by standard microelectronic techniques.
NEW POSSIBILITIES FOR EFFICIENT SILICON INTEGRATED ELECTROOPTICAL MODULATORS
CUTOLO A.
1991-01-01
Abstract
A new class of silicon electro-optical modulators for lambda = 1.3 and 1.55-mu-m is proposed and analyzed. The devices, based on single- and multi-pass Fabry-Perot interferometry, can be built by standard microelectronic techniques.File in questo prodotto:
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