Taking advantage of a new interferometric technique and relying on a suitable model for the electron-hole transient recombination process, we propose an all optical measurement procedure able to separate the bulk contribution from the surface contribution when measuring the recombination lifetime in silicon wafers. In particular our technique is able to measure the bulk lifetime and the surface recombination velocity at low injection levels and allows the characterization of bulk silicon wafers and surface passivation techniques. The validity of our approach is confirmed by various numerical simulations and several experimental results. Copyright (C) 1996 Elsevier Science Ltd
Contactless characterization of the recombination process in silicon wafers: Separation between bulk and surface contribution
Cutolo A;
1996-01-01
Abstract
Taking advantage of a new interferometric technique and relying on a suitable model for the electron-hole transient recombination process, we propose an all optical measurement procedure able to separate the bulk contribution from the surface contribution when measuring the recombination lifetime in silicon wafers. In particular our technique is able to measure the bulk lifetime and the surface recombination velocity at low injection levels and allows the characterization of bulk silicon wafers and surface passivation techniques. The validity of our approach is confirmed by various numerical simulations and several experimental results. Copyright (C) 1996 Elsevier Science LtdI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
