In this paper we present various approaches to the measurement of recombinative parameters in silicon wafers, epitaxial layers and solar cells. In particular our techniques are able to measure the bulk lifetime and the surface recombination velocity at low injection levels. We also show that the techniques presented are a reliable tool to monitor the fabrication process of a standard crystalline silicon solar cell. In all the methodologies presented there are no stringent requirements concerning the state of wafer surface. (C) 2002 Published by Elsevier Science Ltd.
Optical characterization of the recombination process in silicon wafers, epilayers and devices
Cutolo A;
2003-01-01
Abstract
In this paper we present various approaches to the measurement of recombinative parameters in silicon wafers, epitaxial layers and solar cells. In particular our techniques are able to measure the bulk lifetime and the surface recombination velocity at low injection levels. We also show that the techniques presented are a reliable tool to monitor the fabrication process of a standard crystalline silicon solar cell. In all the methodologies presented there are no stringent requirements concerning the state of wafer surface. (C) 2002 Published by Elsevier Science Ltd.File in questo prodotto:
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