In this letter, we present a novel structure for light amplitude modulation based on a lateral p-i-n diode combined with a Bragg reflector which transforms the phase shift induced by the plasma dispersion effect in the intrinsic region of the diode into a voltage controlled variation of the reflectivity of the Bragg mirror. Numerical simulations show a modulation depth of 50% achieved in about 12 ns with a power dissipation of 4.0 mW and an insertion loss of 1.0 dB. The device is demonstrated to be very attractive in terms of power dissipation as compared to a Mach-Zehnder interferometer occupying the same area on chip. (C) 1997 American Institute of Physics.
An electrically controlled Bragg reflector integrated in a rib silicon on insulator waveguide
Cutolo A;
1997-01-01
Abstract
In this letter, we present a novel structure for light amplitude modulation based on a lateral p-i-n diode combined with a Bragg reflector which transforms the phase shift induced by the plasma dispersion effect in the intrinsic region of the diode into a voltage controlled variation of the reflectivity of the Bragg mirror. Numerical simulations show a modulation depth of 50% achieved in about 12 ns with a power dissipation of 4.0 mW and an insertion loss of 1.0 dB. The device is demonstrated to be very attractive in terms of power dissipation as compared to a Mach-Zehnder interferometer occupying the same area on chip. (C) 1997 American Institute of Physics.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
