CINECA IRIS Institutional Research Information System
IRIS è la soluzione IT che facilita la raccolta e la gestione dei dati relativi alle attività e ai prodotti della ricerca. Fornisce a ricercatori, amministratori e valutatori gli strumenti per monitorare i risultati della ricerca, aumentarne la visibilità e allocare in modo efficace le risorse disponibili.
EnglishIn this paper, we describe two different kinds of silicon optical modulators both integrated into a silicon on silicon optical channel waveguide which can be realized using a standard bipolar process. The possibility of using standard, well-known technology presents several advantages with respect to III-V optoelectronics. The first device presented is based on a three-terminal active device and exploits the plasma dispersion effect to achieve the desired modulation. The active device used is a bipolar mode field effect transistor; we show how the introduction of the third control terminal introduces some definite advantages with respect to commonly p-i-n driven modulators, The second is an electrically controlled Bragg reflector, In this case, although controlled by a p-i-n diode, fast switching speed is achieved because lower injection levels are required. Numerical simulations and preliminary experimental results are presented on both devices.
| Titolo: | Two silicon optical modulators realizable with a fully compatible bipolar process | |
| Autori interni: | ||
| Data di pubblicazione: | 1998 | |
| Rivista: | ||
| Abstract: | In this paper, we describe two different kinds of silicon optical modulators both integrated into a silicon on silicon optical channel waveguide which can be realized using a standard bipolar process. The possibility of using standard, well-known technology presents several advantages with respect to III-V optoelectronics. The first device presented is based on a three-terminal active device and exploits the plasma dispersion effect to achieve the desired modulation. The active device used is a bipolar mode field effect transistor; we show how the introduction of the third control terminal introduces some definite advantages with respect to commonly p-i-n driven modulators, The second is an electrically controlled Bragg reflector, In this case, although controlled by a p-i-n diode, fast switching speed is achieved because lower injection levels are required. Numerical simulations and preliminary experimental results are presented on both devices. | |
| Handle: | http://hdl.handle.net/20.500.12070/1403 | |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
File in questo prodotto:
Copyright © 2022