The authors analyze the feasibility of laser action in erbium-doped silicon devices. The recent experimental results on spontaneous light emission at 1.54 mum from erbium-doped silicon diodes and theoretical calculation on Bragg grating technology are used to evaluate the best scenario performances. The effects of processes-induced errors on the threshold conditions are taken into account. They show that laser action in the Er : Si system is feasible.

Feasibility analysis of laser action in erbium-doped silicon waveguides

Cutolo A.
2000

Abstract

The authors analyze the feasibility of laser action in erbium-doped silicon devices. The recent experimental results on spontaneous light emission at 1.54 mum from erbium-doped silicon diodes and theoretical calculation on Bragg grating technology are used to evaluate the best scenario performances. The effects of processes-induced errors on the threshold conditions are taken into account. They show that laser action in the Er : Si system is feasible.
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/20.500.12070/1400
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus ND
  • ???jsp.display-item.citation.isi??? 14
social impact