An optoelectronic modulator capable of 1.4 GHz maximum operation frequency is presented. The device comprises a pin diode embedded in a silicon-on-insulator rib waveguide where a Bragg grating is etched. By optimising the dimensions of the device and with a suitable choice of the driving signal, ultra-GHz switching has been achieved.
All-silicon optoelectronic modulator with 1 GHz switching capability
Cutolo A.
2003-01-01
Abstract
An optoelectronic modulator capable of 1.4 GHz maximum operation frequency is presented. The device comprises a pin diode embedded in a silicon-on-insulator rib waveguide where a Bragg grating is etched. By optimising the dimensions of the device and with a suitable choice of the driving signal, ultra-GHz switching has been achieved.File in questo prodotto:
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