An optoelectronic modulator capable of 1.4 GHz maximum operation frequency is presented. The device comprises a pin diode embedded in a silicon-on-insulator rib waveguide where a Bragg grating is etched. By optimising the dimensions of the device and with a suitable choice of the driving signal, ultra-GHz switching has been achieved.

All-silicon optoelectronic modulator with 1 GHz switching capability

Cutolo A.
2003

Abstract

An optoelectronic modulator capable of 1.4 GHz maximum operation frequency is presented. The device comprises a pin diode embedded in a silicon-on-insulator rib waveguide where a Bragg grating is etched. By optimising the dimensions of the device and with a suitable choice of the driving signal, ultra-GHz switching has been achieved.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/20.500.12070/1398
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