Sfoglia per Rivista IEEE TRANSACTIONS ON ELECTRON DEVICES
Mostrati risultati da 1 a 3 di 3
"Electrical Measurement of Electron and Hole Mobilities as a Function of Injection Level in Silicon"
1996-01-01 Bellone, S.; Persiano, G; Strollo, A. G. M.
"Experimental and Numerical Investigation on MOSFET’s Failure during Reverse Recovery of its Internal Diode"
1999-01-01 Busatto, G.; Persiano, G; Iannuzzo, F.
"Measurement of the BJT Activation Current during the Reverse Recovery of Power MOSFET’s Drain-Source Diode"
2001-01-01 Iannuzzo, F.; Persiano, G; Busatto, G.
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
"Electrical Measurement of Electron and Hole Mobilities as a Function of Injection Level in Silicon" | 1-gen-1996 | Bellone, S.; Persiano, G; Strollo, A. G. M. | |
"Experimental and Numerical Investigation on MOSFET’s Failure during Reverse Recovery of its Internal Diode" | 1-gen-1999 | Busatto, G.; Persiano, G; Iannuzzo, F. | |
"Measurement of the BJT Activation Current during the Reverse Recovery of Power MOSFET’s Drain-Source Diode" | 1-gen-2001 | Iannuzzo, F.; Persiano, G; Busatto, G. |
Mostrati risultati da 1 a 3 di 3
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